Al0.6In0.4P1

semiconductor

· Al0.6In0.4P1

Al₀.₆In₀.₄P is a III-V compound semiconductor alloy formed by mixing aluminum phosphide (AlP) and indium phosphide (InP) in a 60:40 ratio. This direct bandgap material is engineered to achieve intermediate optoelectronic properties between its parent compounds, making it relevant for tuning emission wavelengths and device performance in the near-infrared spectrum. The alloy is primarily explored in research and specialized optoelectronic applications where bandgap engineering—the ability to fine-tune electronic properties through composition—is critical, rather than as a high-volume industrial material.

optoelectronic devicesinfrared light-emitting diodesheterojunction engineeringhigh-frequency electronicsphotonic integrated circuitssemiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.300	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.6In0.4P1

Electrical Properties

Regulatory Screening

Environmental

Export Control