Al0.6Ga0.4P1

semiconductor

· Al0.6Ga0.4P1

Al₀.₆Ga₀.₄P is a ternary III-V semiconductor compound—a direct-bandgap alloy combining aluminum, gallium, and phosphorus—engineered to achieve intermediate electronic and optical properties between its binary constituents (AlP and GaP). This material is primarily used in optoelectronic devices and high-frequency electronics where its tunable bandgap and lattice properties enable efficient light emission and fast carrier transport; it is valued in research and specialized industrial applications as an alternative to GaAs or InP when specific wavelength or thermal performance requirements demand the compositional flexibility of a ternary system.

LED emitters and visible light sourcesHigh-frequency transistors and integrated circuitsSolar cells and photovoltaic researchSemiconductor heterostructuresOptoelectronic device researchMonolithic microwave integrated circuits (MMICs)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.400	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.6Ga0.4P1

Electrical Properties

Regulatory Screening

Environmental

Export Control