Al0.6Ga0.4As1

semiconductor

· Al0.6Ga0.4As1

Al0.6Ga0.4As is a direct-bandgap III-V semiconductor alloy formed by alloying aluminum arsenide with gallium arsenide; the 60% aluminum composition positions it in the higher-aluminum range of the AlGaAs family. This material is used in optoelectronic devices—particularly red and near-infrared light-emitting diodes (LEDs) and laser diodes—where its tunable bandgap energy enables emission wavelengths around 650–700 nm; it is also employed in high-speed heterojunction bipolar transistors (HBTs) and integrated photonics. Engineers select AlGaAs alloys over binary GaAs or InGaAs when they need precise wavelength control, improved carrier confinement through bandgap engineering, or enhanced radiative efficiency in specific spectral windows.

red/near-infrared LEDslaser diodesheterojunction bipolar transistorsoptoelectronic integrated circuitsvisible light emittersphotonic devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.300	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.6Ga0.4As1

Electrical Properties

Regulatory Screening

Environmental

Export Control