Al0.5Ga0.5As1

semiconductor

· Al0.5Ga0.5As1

Al₀.₅Ga₀.₅As is a III-V compound semiconductor formed by alloying aluminum arsenide and gallium arsenide in a 1:1 ratio. This direct-bandgap material is engineered to achieve intermediate electronic and optical properties between its parent compounds, making it valuable for optoelectronic and high-frequency applications where bandgap engineering is essential. The material is primarily used in research and production settings for photonic integrated circuits, heterostructure laser diodes, and high-electron-mobility transistors (HEMTs), where its tunable bandgap enables precise control of emission wavelengths and carrier transport across lattice-matched device layers.

heterostructure lasersoptoelectronic integrated circuitshigh-electron-mobility transistorsphotonic waveguidesRF/microwave devicesbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.120	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.5Ga0.5As1

Electrical Properties

Regulatory Screening

Environmental

Export Control