Al0.3In0.7P1

semiconductor

· Al0.3In0.7P1

Al0.3In0.7P1 is a ternary III-V semiconductor compound—a solid solution of aluminum indium phosphide with 30% aluminum and 70% indium. This material belongs to the direct-bandgap semiconductor family and is primarily used in optoelectronic and high-frequency electronic devices where its bandgap energy (tunable between InP and AlP endpoints) enables emission and detection in the near-infrared and visible spectrum. The Al0.3In0.7P composition is notable for lattice matching to InP substrates, making it valuable for heterojunction structures in LEDs, laser diodes, and photodetectors; it offers superior performance to bulk alternatives in applications requiring precise wavelength control and monolithic integration.

infrared LEDs and lasersoptoelectronic heterostructureshigh-frequency transistorsphotovoltaic cellsintegrated photonicsquantum well structures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.3In0.7P1

Electrical Properties

Regulatory Screening

Environmental

Export Control