Al0.3Ga0.7As1

semiconductor

· Al0.3Ga0.7As1

Al₀.₃Ga₀.₇As is a direct-bandgap III-V semiconductor alloy combining aluminum, gallium, and arsenic in a ternary composition that falls within the AlGaAs material system. This alloy is engineered to achieve specific bandgap energies intermediate between pure GaAs and AlAs, making it a cornerstone material for optoelectronic and high-frequency electronic devices where bandgap engineering is critical. The Al₀.₃Ga₀.₇As composition is particularly notable for laser applications, high-brightness LEDs, and heterojunction devices, where its bandgap and lattice properties enable efficient carrier confinement and light generation in the near-infrared to visible spectrum.

semiconductor laser diodeshigh-brightness LEDsoptoelectronic heterostructuresRF/microwave circuitsphotovoltaic window layersquantum well structures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.810	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.3Ga0.7As1

Electrical Properties

Regulatory Screening

Environmental

Export Control