Al0.35Ga0.65As1

semiconductor

· Al0.35Ga0.65As1

Al₀.₃₅Ga₀.₆₅As is a direct-bandgap III-V semiconductor alloy composed of aluminum, gallium, and arsenic, engineered to achieve specific electronic and optical properties through controlled aluminum content. This material is primarily used in optoelectronic and high-frequency electronic devices where its bandgap energy and carrier mobility enable efficient light emission, detection, and high-speed signal processing. Compared to pure GaAs, the aluminum alloying reduces lattice mismatch with GaAs substrates while tuning the bandgap for tailored wavelength applications, making it valuable for integrated photonic and RF circuits where performance at elevated operating temperatures is critical.

laser diodes and LEDsphotodetectors and photodiodesheterojunction bipolar transistors (HBTs)integrated optoelectronic circuitshigh-electron-mobility transistors (HEMTs)fiber-optic communications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.35Ga0.65As1

Electrical Properties

Regulatory Screening

Environmental

Export Control