Al0.2Ga0.8P1

semiconductor

· Al0.2Ga0.8P1

Al₀.₂Ga₀.₈P is a direct-bandgap III-V semiconductor alloy combining aluminum, gallium, and phosphorus in a zinc-blende crystal structure. This material is primarily used in optoelectronic applications, particularly red and orange light-emitting diodes (LEDs) and laser diodes, where its bandgap energy (typically 1.8–2.0 eV) enables efficient photon emission in the visible spectrum. Engineers select this alloy when broader spectral tunability or higher operating temperatures are required compared to pure GaP, making it valuable for indicator lights, display backlighting, and specialized signaling applications in harsh environments.

visible LEDs (red/orange wavelengths)semiconductor laser diodesoptoelectronic integrated circuitshigh-temperature signal applicationsdisplay backlightingIII-V semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.300	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.2Ga0.8P1

Electrical Properties

Regulatory Screening

Environmental

Export Control