Al0.1Cd0.9Sb0.1Te0.9

semiconductor

· Al0.1Cd0.9Sb0.1Te0.9

Al0.1Cd0.9Sb0.1Te0.9 is a quaternary compound semiconductor belonging to the II-VI semiconductor family, specifically a cadmium telluride (CdTe) alloy doped with aluminum and antimony. This is a research-stage material engineered to modify the bandgap and electronic properties of the CdTe base compound for specialized photonic and thermal applications. The aluminum and antimony additions allow tuning of absorption edges and carrier transport characteristics relative to undoped CdTe, making it relevant for infrared detectors, solar cells, and radiation detection systems where bandgap engineering is critical.

infrared detectors and imagingX-ray and gamma-ray detectionphotovoltaic researchbandgap engineeringthermal imaging sensorsspace/radiation instrumentation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.360	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.1Cd0.9Sb0.1Te0.9

Electrical Properties

Regulatory Screening

Environmental

Export Control