Al0.15Ga0.85As1

semiconductor

· Al0.15Ga0.85As1

Al0.15Ga0.85As is a direct-bandgap III-V semiconductor compound in the aluminum gallium arsenide family, engineered with 15% aluminum and 85% gallium content for tuned optoelectronic properties. It is widely used in high-efficiency photovoltaic devices, particularly multi-junction solar cells for space and concentrated photovoltaic systems, as well as in optoelectronic emitters and detectors where its bandgap falls in the near-infrared to visible range. This composition represents a strategic balance between the wider bandgap of pure AlAs and the lattice-matched properties needed for monolithic integration with GaAs substrates, making it a preferred choice for cascade solar cells and heterojunction laser structures where precise bandgap engineering is critical.

multi-junction solar cellsspace photovoltaicsconcentrated photovoltaic (CPV) systemsheterojunction optoelectronic devicesinfrared emitters and detectorsepitaxial semiconductor structures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.600	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.15Ga0.85As1

Electrical Properties

Regulatory Screening

Environmental

Export Control