Al0.01In0.99P1
semiconductor· Al0.01In0.99P1
Al₀.₀₁In₀.₉₉P is an indium phosphide-based III-V semiconductor alloy with minimal aluminum doping (~1%), representing a near-pure InP compound with slight lattice modification. This material belongs to the direct-bandgap semiconductor family and is primarily of research interest for optoelectronic and high-frequency electronic applications, where the small aluminum fraction can be engineered to fine-tune bandgap energy, lattice constant, and carrier transport properties relative to undoped InP.
infrared photodetectorshigh-electron-mobility transistors (HEMTs)optoelectronic researchmillimeter-wave deviceslattice-matched epitaxyquantum well structures
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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