Al0.01In0.99P1

semiconductor

· Al0.01In0.99P1

Al₀.₀₁In₀.₉₉P is an indium phosphide-based III-V semiconductor alloy with minimal aluminum doping (~1%), representing a near-pure InP compound with slight lattice modification. This material belongs to the direct-bandgap semiconductor family and is primarily of research interest for optoelectronic and high-frequency electronic applications, where the small aluminum fraction can be engineered to fine-tune bandgap energy, lattice constant, and carrier transport properties relative to undoped InP.

infrared photodetectorshigh-electron-mobility transistors (HEMTs)optoelectronic researchmillimeter-wave deviceslattice-matched epitaxyquantum well structures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.300	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.01In0.99P1

Electrical Properties

Regulatory Screening

Environmental

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