AgSnSe₂ is a ternary compound semiconductor composed of silver, tin, and selenium, belonging to the I-IV-VI₂ semiconductor family. This material is primarily of research interest for optoelectronic and thermoelectric applications, where its narrow bandgap and mixed-metal composition offer potential advantages in infrared detection, photovoltaic energy conversion, and solid-state cooling devices. While not yet widely deployed in mainstream commercial products, AgSnSe₂ represents an emerging class of environmentally benign alternatives to lead-based semiconductors, with potential relevance to engineers developing next-generation sensors, energy harvesters, and specialized optical components.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,529.7 | ksi | — | ||
Poisson's Ratio(ν) | 0.4500 | - | — | ||
Shear Modulus(G) | 964.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2442 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3261 | eV/atom | — |