AgInO2S is a quaternary semiconductor ceramic compound containing silver, indium, oxygen, and sulfur. This material belongs to the family of mixed-anion semiconductors and is primarily of research and development interest rather than established industrial production. The compound is investigated for potential applications in photocatalysis, optoelectronic devices, and photovoltaic systems where its bandgap and electronic structure may enable light-driven chemical processes or energy conversion; it represents an alternative approach to conventional ternary oxides or sulfides by combining both anion types to engineer material properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.2270 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.000 | eV/atom | — |