AgBiP₂S₆ is a quaternary semiconductor compound composed of silver, bismuth, phosphorus, and sulfur, belonging to the family of metal phosphide-sulfides with potential for optoelectronic and photovoltaic applications. This is primarily a research-phase material studied for its tunable bandgap and layered crystal structure, offering potential advantages in thin-film solar cells, photodetectors, and nonlinear optical devices where conventional semiconductors face limitations. Its ternary composition allows control over electronic properties through stoichiometric variation, making it notable within the broader family of mixed-metal chalcogenides being explored as alternatives to toxic or scarce semiconductor materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,391.7 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2600 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,629.5 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1530 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.109 | eV | DFT · OptB88vdW | ||
| ↳ | 1.515 | eV | DFT · TBmBJ | ||
| ↳ | 1.700 | eV | Measured | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 9.357 | - | DFT · OptB88vdW | ||
| ↳ | 7.867 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000556 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000639 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -105.6 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 318.9 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 32.18 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.3101 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data