AgAsS is a ternary chalcogenide compound composed of silver, arsenic, and sulfur, belonging to the family of metal chalcogenides with potential semiconductor or optoelectronic properties. This material is primarily of research interest rather than established in high-volume industrial production, studied for applications requiring specific electronic or photonic behavior in specialized optical and electronic devices. Engineers would consider AgAsS in advanced materials development contexts where its unique combination of metallic and chalcogenide characteristics might enable novel functionality in infrared optics, nonlinear optical systems, or solid-state electronics not achievable with conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,523.9 | ksi | — | ||
Poisson's Ratio(ν) | 0.3500 | - | — | ||
Shear Modulus(G) | 4,037.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2159 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3414 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.2359 | eV/atom | — |