AgAsS₂ is a ternary semiconductor compound combining silver, arsenic, and sulfur, belonging to the family of chalcogenide semiconductors with potential optoelectronic and photonic properties. This material is primarily of research and developmental interest rather than established in high-volume production, studied for applications requiring direct or indirect bandgap characteristics in the infrared to visible spectrum. Its layered crystal structure and composition make it a candidate for advanced semiconductor devices where silver-based or arsenic-containing compounds offer advantages over conventional Group IV semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 59.33 | GPa | — | ||
Poisson's Ratio(ν) | 0.3500 | - | — | ||
Shear Modulus(G) | 20.98 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.699 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.140 | eV | — | ||
| ↳ | 1.245 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -286.6 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1584 | eV/atom | — |