AgAsS₂ is a ternary semiconductor compound combining silver, arsenic, and sulfur, belonging to the family of chalcogenide semiconductors with potential optoelectronic and photonic properties. This material is primarily of research and developmental interest rather than established in high-volume production, studied for applications requiring direct or indirect bandgap characteristics in the infrared to visible spectrum. Its layered crystal structure and composition make it a candidate for advanced semiconductor devices where silver-based or arsenic-containing compounds offer advantages over conventional Group IV semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 59.33 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3500 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 20.98 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.699 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 2.140 | eV | Measured | ||
| ↳ | 1.245 | eV | DFT · OptB88vdW | ||
| ↳ | 1.988 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 10.50 | - | DFT · OptB88vdW | ||
| ↳ | 7.139 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 2.057 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 2.667 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00107 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00160 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -286.6 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 376.9 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 23.23 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.1584 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data