Ag₈Bi₄O₁₂ is a mixed-metal oxide semiconductor compound combining silver and bismuth in an ordered crystalline structure. This material belongs to the family of complex metal oxides and is primarily of research interest for photocatalytic and optoelectronic applications, where its layered structure and bandgap characteristics offer potential advantages in light-driven catalysis and sensing. While not yet widely deployed in mainstream industrial production, compounds in this material family are being investigated as alternatives to conventional semiconductors for environmental remediation and next-generation electronic devices due to their unique crystal chemistry and potential for tuning electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02830 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6850 | eV/atom | — |