Ag₂N₆ is an experimental semiconductor compound belonging to the family of metal nitrides, specifically a silver nitride phase that exists primarily in research contexts rather than established industrial production. This material is of scientific interest for its potential in advanced electronic and photonic applications, as metal nitrides offer tunable band gaps and promising properties for next-generation devices, though Ag₂N₆ remains largely in the exploratory stage with limited commercial deployment compared to more mature semiconductors like GaN or InN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,086 | ksi | — | ||
Shear Modulus(G) | 2,656.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.899 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.5980 | eV/atom | — |