Ag₂In₂Te₄ is a quaternary semiconductor compound belonging to the chalcogenide family, combining silver, indium, and tellurium elements. This material is primarily of research interest for optoelectronic and thermoelectric applications, where the combination of elements offers tunable band gap and carrier transport properties. While not yet widely deployed in commercial products, materials in this family are being investigated for infrared detectors, photovoltaic devices, and solid-state cooling systems where the layered crystal structure and mixed-metal composition provide advantages over binary and ternary semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,754.8 | ksi | — | ||
Shear Modulus(G) | 1,953.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6646 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2320 | eV/atom | — |