Ag₂In₁Er₁ is an experimental ternary intermetallic semiconductor compound combining silver, indium, and erbium. This material belongs to the broader family of rare-earth-doped semiconductors and is primarily of research interest rather than established industrial production. The incorporation of erbium into silver-indium systems is being investigated for potential applications in optoelectronics, thermoelectrics, and photonic devices where rare-earth elements can enable unique optical and electronic properties unavailable in binary systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,110.7 | ksi | — | ||
Shear Modulus(G) | 4,403.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.07160 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3700 | eV/atom | — |