Ag₂Bi₂Se₄ is a layered quaternary semiconductor compound combining silver, bismuth, and selenium in a fixed stoichiometric ratio. This material belongs to the family of chalcogenide semiconductors and is primarily investigated for thermoelectric and optoelectronic applications where its narrow bandgap and layered crystal structure can be leveraged for energy conversion or photon detection. While not yet widely commercialized, compounds in this material class are of research interest for solid-state cooling devices, infrared sensing, and potentially mid-infrared photonics, where the combination of reasonable mechanical stiffness with semiconductor properties offers advantages over conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,768.4 | ksi | — | ||
Shear Modulus(G) | 3,477 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000900 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2370 | eV/atom | — |