Ag₂Bi₂P₄S₁₂ is a quaternary semiconductor compound combining silver, bismuth, phosphorus, and sulfur elements. This material belongs to the family of mixed-metal chalcogenides and is primarily of research and developmental interest rather than established in high-volume industrial production. The compound's semiconducting properties and layered crystal structure position it as a candidate for solid-state thermoelectric applications, photovoltaic devices, and ionic conductors in specialized energy storage systems, though practical implementation remains limited compared to more mature semiconductor technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 30.28 | GPa | — | ||
Shear Modulus(G) | 18.13 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.109 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3100 | eV/atom | — |