Ag1 In5 S8
semiconductorAg₁In₅S₈ is a ternary semiconductor compound combining silver, indium, and sulfur in a layered crystalline structure, belonging to the family of metal chalcogenides. This material is primarily of research and developmental interest for optoelectronic and photovoltaic applications, where its tunable bandgap and potential for thin-film device fabrication position it as an alternative to more conventional semiconductors like CdTe or CIGS for solar cells and photodetectors. The material's unique cation composition offers opportunities for engineering electronic and optical properties not easily accessible in binary or simpler ternary systems, making it relevant for exploring next-generation absorber layers and specialized sensing devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |