Ag₁B₁O₃ is a mixed-metal oxide semiconductor compound containing silver, boron, and oxygen. This is a research-phase material within the broader family of ternary oxides and silver-based semiconductors, primarily of interest for fundamental materials science rather than established industrial production. Potential applications lie in photocatalysis, optoelectronics, and advanced ceramics research, where the combination of silver's electronic properties with boron oxide's structural framework could offer novel band-gap engineering opportunities compared to binary oxide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02610 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2750 | eV/atom | — |