AgAsZn is an experimental ternary semiconductor compound combining silver, arsenic, and zinc elements. This material belongs to the family of III-V and I-V-VI semiconductors under investigation for optoelectronic and photovoltaic applications, though it remains largely in the research phase with limited industrial deployment. The compound's potential lies in tunable bandgap engineering and possible use in specialized photodetectors or solar devices where unconventional element combinations may offer cost or performance advantages over conventional binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,736.8 | ksi | — | ||
Shear Modulus(G) | -945.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03240 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.05900 | eV/atom | — |