Ag0.25Cd0.5In2.25Te4

semiconductor

· Ag0.25Cd0.5In2.25Te4

Ag0.25Cd0.5In2.25Te4 is a quaternary II-VI semiconductor compound combining silver, cadmium, indium, and tellurium in a mixed-cation telluride structure. This is a research-phase material within the cadmium telluride (CdTe) family, designed to explore how partial substitution of silver and indium affects electronic and optical properties for potential photovoltaic or infrared detection applications. The composition deviates from established CdTe systems to engineer band gap or carrier mobility, making it of interest in advanced optoelectronics rather than volume production.

photovoltaic researchinfrared detectorsnarrow band gap semiconductorsquantum materials researchsolar cell developmentradiation detection

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ag0.25Cd0.5In2.25Te4

Electrical Properties

Regulatory Screening

Environmental

Export Control