Ag0.1Cd0.8In2.1Te4

semiconductor

· Ag0.1Cd0.8In2.1Te4

Ag0.1Cd0.8In2.1Te4 is a quaternary semiconductor compound belonging to the II-VI semiconductor family, combining cadmium telluride (CdTe) with silver and indium dopants to modify electronic and optical properties. This material is primarily investigated in research contexts for infrared detection and radiation sensing applications, where the dopant elements tune the bandgap and carrier concentration to enhance sensitivity in specific spectral regions. The silver and indium additions to the CdTe host lattice represent an advanced approach to engineering detector performance beyond conventional binary or ternary semiconductors, though the material remains largely experimental rather than established in high-volume manufacturing.

infrared detectorsgamma-ray radiation sensorsnuclear radiation detectionspectroscopy instrumentationresearch semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ag0.1Cd0.8In2.1Te4

Electrical Properties

Regulatory Screening

Environmental

Export Control