AcInO3 is an ternary oxide semiconductor compound combining actinium, indium, and oxygen in a stoichiometric 1:1:3 ratio. This is a research-phase material within the family of rare-earth and actinide oxide semiconductors, primarily explored for its electronic and optical properties in fundamental materials science rather than established industrial production. Due to the scarcity and radioactivity of actinium, AcInO3 remains largely confined to academic investigation; however, indium oxide-based semiconductors (and analogous ternary oxides) have demonstrated potential in transparent conductive coatings, thin-film transistors, and advanced optoelectronic devices where conventional materials face limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.695 | eV | — | ||
Magnetic Moment(μB) | 0.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.748 | eV/atom | — |