AcGaO3 is an oxide semiconductor compound in the gallium oxide family, likely a ternary or doped variant used in high-performance electronic and photonic device research. This material is of primary interest in advanced semiconductor applications where wide bandgap semiconductors offer advantages over conventional silicon, particularly in power electronics, UV detection, and high-temperature operation where thermal and electrical robustness are critical. AcGaO3 represents an emerging research material within the broader gallium oxide platform, which continues to attract attention as a candidate for next-generation power devices, RF applications, and extreme-environment sensors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26,146 | ksi | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 15,556.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3309 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.174 | eV | — | ||
| ↳ | 3.071 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -2.914 | eV/atom | — | ||
| ↳ | -2.895 | eV/atom | — |