ZrSbN3 is a ternary nitride semiconductor compound combining zirconium, antimony, and nitrogen—a research-phase material explored for wide-bandgap semiconductor applications. While not yet commercialized at scale, this material belongs to the family of transition metal antimonide nitrides, which are investigated for potential use in high-temperature electronics, power devices, and optoelectronic applications where conventional semiconductors reach their thermal or electrical limits. Engineers would consider this material primarily in exploratory device research rather than production, as the compound remains in early development with properties and manufacturing routes still under investigation.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 0.00000132 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.320 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data