ZrS2 is a layered transition metal dichalcogenide semiconductor composed of zirconium and sulfur, belonging to the same materials family as MoS2 and WS2. While primarily a research material rather than an established commercial product, ZrS2 is investigated for applications leveraging its two-dimensional electronic properties, including potential use in field-effect transistors, photodetectors, and energy storage devices. Its layered crystal structure and moderate mechanical properties make it attractive for emerging nanoelectronic and optoelectronic applications where ultrathin semiconducting films are advantageous.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 44.09 | GPa | — | ||
Exfoliation Energy(Eexf) | 88.92 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2300 | - | — | ||
Shear Modulus(G) | 31.87 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.752 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.750 | eV | — | ||
| ↳ | 0.9110 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 35.90 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -307.9 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -1.995 | eV/atom | — | ||
| ↳ | -1.686 | eV/atom | — |