ZrMgO₂S is an experimental ternary compound semiconductor combining zirconium, magnesium, oxygen, and sulfur—a mixed-anion material in the oxymonochalcogenide family. This research-phase compound is being investigated for photocatalytic and optoelectronic applications where the combination of anions creates tunable electronic properties unavailable in binary oxides or sulfides alone. Interest centers on photocatalysis (water splitting, pollutant degradation), solid-state electronics, and wide-bandgap semiconductor platforms where the oxygen-sulfur mixing may enable band-gap engineering and enhanced light absorption compared to conventional metal oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 0.00000970 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.500 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data