ZrGeON2 — Properties & Data | MatWorld

ZrGeON2

semiconductor

· ZrGeON2

ZrGeON2 is an experimental ternary ceramic compound combining zirconium, germanium, oxygen, and nitrogen. This material belongs to the oxynitride ceramic family, which is of research interest for high-temperature structural applications and advanced semiconductor devices due to the tailored electronic and thermal properties that result from blending metallic, covalent, and ionic bonding character. As a relatively unexplored compound, ZrGeON2 represents materials development work in the optoelectronics and refractory ceramics space, with potential applications where thermal stability, hardness, and controlled band-gap engineering are design constraints.

experimental semiconductorshigh-temperature ceramicsoxynitride researchelectronic band-gap engineeringrefractory coatingsadvanced ceramics R&D

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.900	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.000127	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7200	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZrGeON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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