ZrGaO2N
semiconductor· ZrGaO2N
ZrGaO₂N is an oxynitride semiconductor compound combining zirconium, gallium, oxygen, and nitrogen—a research-stage material that extends the semiconductor design space beyond conventional binary oxides and nitrides. This material family is investigated primarily for wide-bandgap photocatalysis and photovoltaic applications, where the mixed anionic framework (oxygen and nitrogen) enables bandgap engineering and visible-light response. ZrGaO₂N and related oxynitrides offer potential advantages over single-anion semiconductors in catalytic water splitting and pollutant degradation, though they remain largely in academic development and are not yet deployed in mainstream commercial products.
photocatalysis researchvisible-light water splittingenvironmental remediationwide-bandgap semiconductorsexperimental photovoltaics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.