ZrGaO2N — Properties & Data | MatWorld

ZrGaO2N

semiconductor

· ZrGaO2N

ZrGaO₂N is an oxynitride semiconductor compound combining zirconium, gallium, oxygen, and nitrogen—a research-stage material that extends the semiconductor design space beyond conventional binary oxides and nitrides. This material family is investigated primarily for wide-bandgap photocatalysis and photovoltaic applications, where the mixed anionic framework (oxygen and nitrogen) enables bandgap engineering and visible-light response. ZrGaO₂N and related oxynitrides offer potential advantages over single-anion semiconductors in catalytic water splitting and pollutant degradation, though they remain largely in academic development and are not yet deployed in mainstream commercial products.

photocatalysis researchvisible-light water splittingenvironmental remediationwide-bandgap semiconductorsexperimental photovoltaics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.900	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.000894	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7600	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZrGaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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