Zr4I8 is an inorganic semiconductor compound based on zirconium iodide chemistry, likely in the early research or development stage as a functional material. This material family is of interest in optoelectronic and photonic applications where halide-based semiconductors offer tunable bandgaps and potential for next-generation devices. Engineers considering zirconium halide compounds typically evaluate them for specialized applications where their electronic properties can be leveraged, though such materials remain less established than mainstream semiconductor alternatives and may require careful handling due to iodine reactivity.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 29.37 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 19.54 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02190 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9270 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data