Zr2 S2 O2
semiconductorZr₂S₂O₂ is an oxygenated zirconium sulfide semiconductor compound that combines zirconium, sulfur, and oxygen into a mixed-valence layered structure. This material is primarily of research and developmental interest, investigated for potential applications in photocatalysis, optoelectronics, and energy conversion devices where the combination of zirconium's thermal stability with sulfide semiconducting properties offers opportunities for tuning bandgap and light absorption. While not yet in widespread commercial production, zirconium-based sulfides and oxysulfides are being explored as alternatives to more common semiconductors (like metal oxides or classic II–VI compounds) because they can offer improved charge carrier mobility and enhanced catalytic activity in environmental remediation and sustainable energy applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |