Zr1S2 is a layered transition metal dichalcogenide semiconductor compound combining zirconium and sulfur, belonging to the family of two-dimensional materials with potential for nanoelectronic and optoelectronic applications. This material is primarily studied in research settings for its electronic band structure and potential use in field-effect transistors, photodetectors, and flexible electronics, where its layered structure enables mechanical flexibility and tunable electrical properties compared to conventional bulk semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 44.09 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 31.87 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9108 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.686 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data