ZnTaO2N — Properties & Data | MatWorld

ZnTaO2N

semiconductor

· ZnTaO2N

ZnTaO2N is an oxynitride semiconductor compound combining zinc, tantalum, oxygen, and nitrogen. This is a research material within the broader family of transition metal oxynitrides, designed to extend visible-light absorption and improve photocatalytic performance compared to conventional oxide semiconductors. The compound is primarily under investigation for photocatalytic water splitting and environmental remediation applications, where its tunable bandgap and enhanced light absorption offer potential advantages over traditional TiO₂ and other oxide photocatalysts.

photocatalytic water splittingenvironmental remediationvisible-light photocatalysishydrogen generationwastewater treatmentresearch-stage materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.0000569	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.2600	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnTaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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