ZnSnP₂ is a III-V ternary semiconductor compound combining zinc, tin, and phosphorus, belonging to the family of wide-bandgap semiconductors. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where its direct bandgap and tunable electronic properties make it a candidate for next-generation solar cells, LED structures, and infrared detectors. While not yet widely commercialized compared to mature semiconductors like GaAs or InP, ZnSnP₂ offers potential advantages in lattice engineering and cost reduction for specialized photonic devices, though reproducibility and scalability remain active research challenges.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 64.97 | GPa | — | ||
Poisson's Ratio(ν) | 0.2600 | - | — | ||
Shear Modulus(G) | 39.96 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.382 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.100 | eV | — | ||
| ↳ | 0.5860 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 15.58 | - | — | ||
| ↳ | 18.04 | - | — | ||
| ↳ | 15.00 range 13.92–16.08median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.04724 | C/m² | — | ||
| ↳ | 0.7434 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -126 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2140 | eV/atom | — |