ZnSmO3 is a rare-earth doped zinc oxide compound belonging to the ternary oxide semiconductor family, synthesized primarily in research settings rather than mature industrial production. This material is investigated for optoelectronic and photocatalytic applications, where the samarium dopant modifies the bandgap and defect chemistry of zinc oxide to enhance performance in ultraviolet emission, photodegradation, and gas sensing. It represents an emerging platform for researchers exploring how rare-earth elements can tune semiconductor properties beyond conventional binary oxides like ZnO.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5430 | eV | DFT · PBE | ||
Magnetic Moment(μB) | 0.2000 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.311 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data