ZnSiO₂S is a mixed zinc silicate-sulfide semiconductor compound combining silicate and sulfide phases, representing an emerging material in the semiconductor research space. This compound is primarily of interest in photonic and optoelectronic applications where the combination of silicate stability and sulfide photocatalytic properties offers potential advantages for visible-light-driven processes. While not yet widely commercialized at scale, zinc silicate-sulfide systems are being explored as alternatives to conventional photocatalysts and phosphors, particularly where cost-effectiveness and environmental benignity are priorities over established semiconductor performance.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.600 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.00000501 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.100 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data