ZnSe — Properties & Data | MatWorld

ZnSe

semiconductor

· ZnSe

ZnSe is a II-VI compound semiconductor with a zinc-blende crystal structure, combining zinc and selenium for direct bandgap optoelectronic performance. It is primarily used in infrared optics, laser systems, and high-energy radiation detection where its transparency in the mid-infrared spectrum and radiation hardness are critical. ZnSe is valued in applications requiring windows, lenses, and detectors that operate in wavelength ranges where conventional optical materials (glass, sapphire) are opaque, making it essential for thermal imaging, CO₂ laser optics, and space-based instrumentation despite higher cost than alternatives.

infrared optics and windowsCO₂ laser componentsthermal imaging systemsradiation detectorsspace instrumentationhigh-energy physics experiments

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)3 entries	58.26	GPa	—
↳	58.26	GPa	—
↳	59.70	GPa	—
Elastic Compliance Tensor(Sij)	Matrix (redacted)	1/GPa	—
Elastic Anisotropy(AU)	0.7271	-	—
Elastic Stiffness Tensor(Cij)	Matrix (redacted)	Pa	—
Exfoliation Energy(Eexf)	89.18	meV/atom	—
Poisson's Ratio(ν)2 entries	0.2959	-	—
↳	0.3000	-	—
Shear Modulus(G)3 entries	27.53	GPa	—
↳	27.53	GPa	—
↳	28.86	GPa	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Thermal Conductivity(k)	15.60	W/(m·K)	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	5.132	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)2 entries	2.790	eV	—
↳	1.224	eV	—
Dielectric Constant (Relative Permittivity)(εr)3 entries	10.40	-	—
↳	11.65	-	—
↳	9.353 range 7.903–10.80median of 2 measurements	-	—
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	—
Total Dielectric Tensor(ε)	Matrix (redacted)	-	—
Magnetic Moment(μB)	0.000	µB	—
Piezoelectric Modulus(eij)2 entries	0.03296	C/m²	—
↳	0.7398	C/m²	—
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	—
Seebeck Coefficient(S)	-41.04	µV/K	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	—
Formation Energy(ΔHf)2 entries	-0.8457	eV/atom	—
↳	-0.7180	eV/atom	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.