ZnSe

semiconductor
· ZnSe

ZnSe is a II-VI compound semiconductor with a zinc-blende crystal structure, combining zinc and selenium for direct bandgap optoelectronic performance. It is primarily used in infrared optics, laser systems, and high-energy radiation detection where its transparency in the mid-infrared spectrum and radiation hardness are critical. ZnSe is valued in applications requiring windows, lenses, and detectors that operate in wavelength ranges where conventional optical materials (glass, sapphire) are opaque, making it essential for thermal imaging, CO₂ laser optics, and space-based instrumentation despite higher cost than alternatives.

infrared optics and windowsCO₂ laser componentsthermal imaging systemsradiation detectorsspace instrumentationhigh-energy physics experiments

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Bulk Modulus(K)3 entries
58.26
GPa
58.26
GPa
59.70
GPa
Elastic Compliance Tensor(Sij)
Matrix (redacted)
1/GPa
Elastic Anisotropy(AU)
0.7271
-
Elastic Stiffness Tensor(Cij)
Matrix (redacted)
Pa
Exfoliation Energy(Eexf)
89.18
meV/atom
Poisson's Ratio(ν)2 entries
0.2959
-
0.3000
-
Shear Modulus(G)3 entries
27.53
GPa
27.53
GPa
28.86
GPa
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Thermal Conductivity(k)
15.60
W/(m·K)
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Density(ρ)
5.132
kg/m³
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)2 entries
2.790
eV
1.224
eV
Dielectric Constant (Relative Permittivity)(εr)3 entries
10.40
-
11.65
-
9.353
range 7.903–10.80median of 2 measurements
-
Electronic Dielectric Tensor(ε∞)
Matrix (redacted)
-
Total Dielectric Tensor(ε)
Matrix (redacted)
-
Magnetic Moment(μB)
0.000
µB
Piezoelectric Modulus(eij)2 entries
0.03296
C/m²
0.7398
C/m²
Piezoelectric Stress Tensor(eij)
Matrix (redacted)
C/m²
Seebeck Coefficient(S)
-41.04
µV/K
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
0.000
eV/atom
Formation Energy(ΔHf)2 entries
-0.8457
eV/atom
-0.7180
eV/atom
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.