ZnSe is a II-VI compound semiconductor with a zinc-blende crystal structure, combining zinc and selenium for direct bandgap optoelectronic performance. It is primarily used in infrared optics, laser systems, and high-energy radiation detection where its transparency in the mid-infrared spectrum and radiation hardness are critical. ZnSe is valued in applications requiring windows, lenses, and detectors that operate in wavelength ranges where conventional optical materials (glass, sapphire) are opaque, making it essential for thermal imaging, CO₂ laser optics, and space-based instrumentation despite higher cost than alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 58.26 | GPa | DFT | ||
| ↳ | 59.70 | GPa | DFT · OptB88vdW | ||
| ↳ | 58.26 | GPa | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 0.7271 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | DFT · PBE | ||
Exfoliation Energy(Eexf) | 89.18 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν)2 entries | 0.3000 | - | DFT · OptB88vdW | ||
| ↳ | 0.2959 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 27.53 | GPa | DFT | ||
| ↳ | 28.86 | GPa | DFT · OptB88vdW | ||
| ↳ | 27.53 | GPa | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 15.60 | W/(m·K) | Measured |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.132 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 2.790 | eV | Measured | ||
| ↳ | 1.224 | eV | DFT · OptB88vdW | ||
| ↳ | 2.630 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 11.65 | - | DFT · OptB88vdW | ||
| ↳ | 10.40 | - | DFT · PBE | ||
| ↳ | 9.353 range 7.903–10.80median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 7.911 | - | DFT · OptB88vdW | ||
| ↳ | 5.493 | - | DFT · TBmBJ | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Electron Effective Mass(m*e) | 0.1300 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.8900 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.7398 | C/m² | DFT · OptB88vdW | ||
| ↳ | 0.03296 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.000246 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00292 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -41.04 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 291.4 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 10.16 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.7180 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -0.8457 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data