ZnInO2N is an experimental oxynitride ceramic compound combining zinc, indium, oxygen, and nitrogen—a materials research composition designed to explore new electronic and optical properties at the intersection of oxide and nitride ceramics. While not yet in widespread commercial production, this material family is being investigated for next-generation semiconducting and photocatalytic applications where the oxynitride structure can provide tunable band gaps and enhanced chemical stability compared to conventional oxides or nitrides alone. Researchers are evaluating such materials for optoelectronic devices, photocatalysis, and thin-film applications where the mixed anion approach offers design flexibility unavailable in traditional binary compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 2.090 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.580 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data