ZnInGaO4 is a ternary oxide ceramic compound combining zinc, indium, and gallium oxides, belonging to the family of wide-bandgap semiconductor ceramics. This material is primarily investigated in research contexts for transparent conductive oxide (TCO) applications and optoelectronic devices, where its semiconductor properties and optical transparency make it a candidate alternative to conventional indium tin oxide (ITO) in displays, photovoltaics, and gas sensors. Engineers consider this material when seeking indium-efficient alternatives to ITO or when designing transparent electronics requiring chemical stability and controlled electrical conductivity in demanding environments.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 163.4 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3400 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 59.28 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.183 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.301 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 4.532 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01550 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.790 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data