ZnIn₂Te₄ is a ternary II-III-VI semiconductor compound belonging to the chalcogenide family, combining zinc and indium with tellurium in a defect tetrahedral structure. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its wide bandgap and tunable electronic properties make it relevant for UV-visible photodetectors, radiation detectors, and experimental thin-film solar cells. While not yet widely commercialized like binary alternatives (GaAs, CdTe), ternary telluride semiconductors like ZnIn₂Te₄ are investigated for their potential to optimize band structure and carrier transport in niche high-performance applications where material engineering beyond binary compounds is justified.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 28.39 | GPa | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 16.77 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.561 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.870 | eV | — | ||
| ↳ | 0.7710 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 14.97 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.5022 | C/m² | — | ||
Seebeck Coefficient(S) | -127.5 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3600 | eV/atom | — |