ZnIn2GeAs4 is a quaternary III-V semiconductor ceramic compound combining zinc, indium, germanium, and arsenic elements. This material belongs to the family of wide-bandgap semiconductors and is primarily investigated in research contexts for optoelectronic and photovoltaic applications where tunable electronic properties and lattice matching to other compound semiconductors are advantageous. Engineers consider such quaternary compounds when designing multijunction solar cells, infrared detectors, or high-frequency devices requiring bandgap engineering that cannot be achieved with binary or ternary alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.326 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2402 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.05808 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data