ZnIn2Cu2S5 is a quaternary semiconductor compound belonging to the sulfide family, combining zinc, indium, and copper in a mixed-valence structure. This material is primarily investigated in photovoltaic and optoelectronic research contexts, where its tunable bandgap and light-absorbing properties make it a candidate for thin-film solar cells and related energy conversion devices. While not yet widely deployed in mainstream industrial production, compounds in this family are studied as alternatives to conventional absorber layers in next-generation photovoltaic technologies, offering potential advantages in cost and material abundance compared to established semiconductor platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.524 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03300 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00300 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6083 | eV/atom | — |