ZnGeO3 — Properties & Data | MatWorld

ZnGeO3

semiconductor

· ZnGeO3

ZnGeO3 is an ternary oxide semiconductor compound combining zinc and germanium elements, belonging to the broader family of wide-bandgap semiconductors. This material is primarily investigated in research and development contexts for optoelectronic and photonic device applications, where its semiconductor properties could enable UV detection, high-temperature electronics, or specialized photocatalytic systems. ZnGeO3 represents an emerging alternative within the oxide semiconductor space, offering potential advantages in material stability or device performance compared to more conventional binary oxides, though practical industrial deployment remains limited.

UV photodetectorsHigh-temperature semiconductorsResearch optoelectronicsPhotocatalytic devicesWide-bandgap device platformsExperimental semiconductor applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	194.8	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3100	-	DFT · OptB88vdW
Shear Modulus(G)	85.88	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	6.022	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)4 entries	0.000	eV	DFT · PBE
↳	1.700	eV	DFT · GLLB-SC
↳	2.373	eV	DFT · OptB88vdW
↳	4.062	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	30.79	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	4.455	-	DFT · OptB88vdW
↳	3.279	-	DFT · TBmBJ
Magnetic Moment(μB)2 entries	-0.0000444	μB	DFT
↳	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.05640	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000455	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00110	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-69.24	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	465.4	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	0.000	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.00150	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)3 entries	-1.247	eV/atom	DFT
↳	0.4800	eV/atom	DFT
↳	-1.702	eV/atom	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnGeO3

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

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