ZnGeO2N — Properties & Data | MatWorld

ZnGeO2N

ceramic

· ZnGeO2N

ZnGeO₂N is an experimental oxynitride ceramic compound combining zinc, germanium, oxygen, and nitrogen elements. This material belongs to the emerging class of wide-bandgap semiconductors and functional ceramics, currently investigated primarily in research settings rather than established industrial production. The zinc germanium oxynitride family is of interest for next-generation optoelectronic devices, high-temperature structural applications, and wide-bandgap semiconductor technologies where conventional oxides or nitrides show limitations.

wide-bandgap semiconductorsoptoelectronic deviceshigh-temperature ceramicsresearch and developmentadvanced functional ceramicsnext-generation electronic materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.09204	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8200	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnGeO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental